Method and system for detecting tunnel oxide encroachment on...

Details Method and system for detecting tunnel oxide encroachment on... Method and system for detecting tunnel oxide encroachment on...

2005-03-08

2005-03-08

Blum, David S. (Department: 2813)

Semiconductor device manufacturing: process

With measuring or testing

C702S117000

Reexamination Certificate

active

06864106

ABSTRACT:
A method for detecting tunnel oxide encroachment on a memory device. In one method embodiment, the present invention applies a baseline voltage burst to a gate of the memory device. Next, the present embodiment generates a baseline performance distribution graph of bit line current as a function of gate voltage for the memory device. The present embodiment then applies a channel program voltage burst to the gate of the memory device. Moreover, the present embodiment generates a channel program performance distribution graph of bit line current as a function of gate voltage for the memory device. The present embodiment then applies a channel erase voltage burst to the gate of the memory device. Additionally, the present embodiment generates a channel erase performance distribution graph of bit line current as a function of gate voltage for the memory device. A comparison of the channel program performance distribution graph and the channel erase performance distribution graph with respect to said baseline performance distribution graph is then performed. In so doing, an asymmetric distribution of the channel program performance distribution graph and the channel erase performance distribution graph with respect to the baseline performance distribution indicates tunnel oxide encroachment.

REFERENCES:
patent: 6684173 (2004-01-01), Kessenich et al.
patent: 6697753 (2004-02-01), Samuelson et al.
patent: 6738289 (2004-05-01), Gongwer et al.

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