Method and system for designing a power converter

Details Method and system for designing a power converter Method and system for designing a power converter

2007-06-04

2009-10-06

Nguyen, Matthew V (Department: 2838)

Data processing: generic control systems or specific application

Specific application, apparatus or process

Product assembly or manufacturing

C363S147000

Reexamination Certificate

active

07599754

ABSTRACT:
After specifications of a power converter are determined, circuit parameter values, a semiconductor device to be used, and an equivalent circuit of the semiconductor device are determined, and parameter values of the equivalent circuit are extracted. Semiconductor device loss is calculated from semiconductor device equivalent circuit parameter data, circuit parasitic parameter data, and circuit basic parameters. Determination as to whether or not the circuit loss optimal value has been achieved is made in consideration of power conversion circuit component parameter data. When the optimal value has not been achieved, the circuit parasitic parameter values are set again so as to create the circuit parasitic parameter data. When the optimal value has been achieved, the semiconductor device loss and the circuit parasitic parameter values at that time are output as design data, and the power converter is designed by use of the optimized semiconductor device loss and circuit parasitic parameter values.

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Zhenxian Liang et al.; Integrated CoolMOS FET/SiC-Diode Module for High Performance Power Switching; IEEE Transactions on Power Electronics, vol. 20, No. 3, May 2005.
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Hirofumi Itokawa et al.; “Power Loss Limit Analysis Method for High Output-Power Density Converters by a Pair of Si-MOSFET with SiC-SBD”; The Paper of Joint Technical Meeting on Election Devices and Semiconductor Power Converter, IEE Japan, vol. EDD-05 No. 45-51, pp. 9-14, Oct. 27, 2005.

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