Method and system for derivation of breakdown voltage for...

Details Method and system for derivation of breakdown voltage for... Method and system for derivation of breakdown voltage for...

2005-09-14

2008-12-09

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

With measuring or testing

C257SE21520, C257S001000

Reexamination Certificate

active

07462497

ABSTRACT:
A method and system for multi-point (e.g., double-point) GOI test that can efficiently judge failure modes by testing only two points. We can measure leakage currents at only two voltages, which are the cut points of mode A-B and B-C, instead of the whole ramped voltages to save time and cost with the same test effectiveness according to a specific embodiment. By correlating leakage current at extrinsic field to the breakdown voltage, we can also evaluate the intrinsic reliability even if the samples are not subjected to actual breakdown according to a specific embodiment.

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patent: 2007/0059850 (2007-03-01), Zhao et al.
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