Method and system for controlling the chemical mechanical...

Details Method and system for controlling the chemical mechanical... Method and system for controlling the chemical mechanical...

2007-09-11

2007-09-11

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

C438S014000, C438S692000

Reexamination Certificate

active

10261612

ABSTRACT:
A method and a controller for the chemical mechanical polishing (CMP) of substrates and, in particular, for the chemical mechanical polishing of metallization layers is disclosed. In a linear model of the CMP process, the erosion of the metallization layer to be treated is determined by the overpolish time and possibly by an extra polish time on a separate polishing platen for polishing the dielectric layer, wherein the CMP inherent characteristics are represented by sensitivity parameters derived empirically. Moreover, the control operation is designed so that even with a certain inaccuracy of the sensitivity parameters due to subtle process variations, a reasonable controller response is obtained.

REFERENCES:
patent: 6230069 (2001-05-01), Campbell et al.
patent: 6350693 (2002-02-01), Chang et al.
patent: 6409936 (2002-06-01), Robinson et al.
patent: 6492273 (2002-12-01), Hofmann et al.
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Chamness et al., “A Comparison of R2R Control Algorithms for the CMP with Measurement Delays,” AEC/APC XIII Symposium 2001.

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