Method and system for controlling radical distribution

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With etchant gas supply or exhaust structure located outside...

Reexamination Certificate

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Details

C118S715000, C216S067000, C427S569000, C438S710000, C438S771000, C438S776000, C134S001100

Reexamination Certificate

active

08038834

ABSTRACT:
A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.

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