Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2005-11-04
2008-10-21
Sefer, A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S378000, C257S462000, C257S518000, C257SE21375
Reexamination Certificate
active
07439558
ABSTRACT:
A method and system for providing a bipolar transistor is described. The method and system include providing a compound base region, providing an emitter region coupled with the compound base region, and providing a collector region coupled with the compound base region. The bipolar transistor may also include at least one other predetermined portion. The method and system also include providing at least one predetermined amount of oxygen to at least one of the compound base region, the emitter region, the collector region, and the predetermined portion of the bipolar transistor.
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Atmel Corporation
Schwegman Lundberg & Woessner, P.A.
Sefer A.
Wilson Scott R
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