Method and system for contiguous proximity correction for...

Details Method and system for contiguous proximity correction for... Method and system for contiguous proximity correction for...

2008-03-11

2008-03-11

Huff, Mark F. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S313000

Reexamination Certificate

active

10895512

ABSTRACT:
According to one embodiment, a method for patterning a set of features for a semiconductor device includes providing a mask including a substrate and at least one pair of first and second main features disposed on a substrate. The method also includes positioning the mask over a layer of light-sensitive material, and exposing the mask to a light source. The mask also includes at least one sub-resolution feature connecting the first and second main features.

REFERENCES:
patent: 6465138 (2002-10-01), Stanton
patent: 6692900 (2004-02-01), Baggenstoss
U.S. Appl. No. 10/406,101, filed Apr. 2, 2003, entitled “Photo Reticles using Channel Assist Features”, 15 pages of text and 2 pages of drawings.

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