Method and system for charged particle beam exposure

Details Method and system for charged particle beam exposure Method and system for charged particle beam exposure

1999-09-23

2000-04-04

Berman, Jack

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

2504911, H01J 3720

Patent

active

060464593

ABSTRACT:
With using one scanning stage 19 where a plurality of wafers 16A to 16E is mounted through wafer holders 20A to 20E and balancing stage 21 disposed below scanning stage 19, scanning stage 19 is scanned based on exposure data common to a plurality of charged particle beam exposure apparatus 10A to 10E, and balancing stage 21 is scanned so that barycenter G of scanning stage 19 and balancing stage 21 becomes a fixed point. The positions of reflecting mirrors 70L and 70R secured to stage 19 are measured and based on their values, the expansion/contraction ratio of stage 19 and the positions of samples 16A to 16E are calculated to obtain deviation of the positions from target positions. Stage 19 is modeled such that rigid areas 19A to 19E are loosely connected, and for each area, the positions of three points are measured to calculate deviation of the exposure target position due to rotation of each ridged area. These deviations are corrected by deflectors 18A to 18D.

REFERENCES:
patent: 4636968 (1987-01-01), Gotou et al.
patent: 4694178 (1987-09-01), Harte
patent: 5981118 (1999-11-01), Yasutake et al.

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