Method and system for chalcogenide-based nanowire memory

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material

Reexamination Certificate

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C257S002000, C257S200000, C257S734000, C257SE31029, C438S131000, C977S940000, C977S943000

Reexamination Certificate

active

11541464

ABSTRACT:
Chalcogenide-based nanowire memories are implemented using a variety of methods and devices. According to an example embodiment of the present invention, a method of manufacturing a memory circuit is implemented. The method includes depositing nanoparticles at locations on a substrate. Chalcogenide-based nanowires are created at the locations on the substrate using a vapor-liquid-solid technique. Insulating material is deposited between the chalcogenide-based nanowires. Lines are created to connect at least some of the chalcogenide-based nanowires.

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Stefan Meister et al. “Synthesis and Characterization of Phase-Change Nanowires.”NanoLetters.American Chemical Society (Jun. 2006).

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