Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2008-07-29
2008-07-29
Sefer, A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S002000, C257S200000, C257S734000, C257SE31029, C438S131000, C977S940000, C977S943000
Reexamination Certificate
active
07405420
ABSTRACT:
Chalcogenide-based nanowire memories are implemented using a variety of methods and devices. According to an example embodiment of the present invention, a method of manufacturing a memory circuit is implemented. The method includes depositing nanoparticles at locations on a substrate. Chalcogenide-based nanowires are created at the locations on the substrate using a vapor-liquid-solid technique. Insulating material is deposited between the chalcogenide-based nanowires. Lines are created to connect at least some of the chalcogenide-based nanowires.
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Cui Yi
Kim Sang-Bum
Meister Stefan
Peng Hailin
Wong H. S. Philip
Crawford & Maunu PLLC
Sefer A.
The Board of Trustees of the Leland Stanford Junior University
Wilson Scott R.
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