Amplifiers – With semiconductor amplifying device – Including particular biasing arrangement
Reexamination Certificate
2006-08-22
2006-08-22
Pascal, Robert (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including particular biasing arrangement
Reexamination Certificate
active
07095285
ABSTRACT:
According to one embodiment of the present invention a method for biasing a power amplifier having at least one transistor exhibiting kink anomaly includes providing a bias circuit coupled to a gate of at least one transistor of the power amplifier. The method also includes providing, by the bias circuit, a bias voltage to the gate. The bias circuit has a load characteristic that intersects a current versus gate voltage curve for the gate at a frequency of operation of the power amplifier only once and that exhibits a low impedance at the intersection of the load characteristic with the current versus gate curve of the gate.
REFERENCES:
patent: 6759906 (2004-07-01), Matsunaga et al.
patent: 6943631 (2005-09-01), Scherrer et al.
Fletcher David R.
Helm Brian P.
Heston David D.
Heston John G.
Heston Scott Mitchel
Nguyen Hieu
Pascal Robert
Raytheon Company
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