Method and system for biasing power amplifiers with kink...

Amplifiers – With semiconductor amplifying device – Including particular biasing arrangement

Reexamination Certificate

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Reexamination Certificate

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07095285

ABSTRACT:
According to one embodiment of the present invention a method for biasing a power amplifier having at least one transistor exhibiting kink anomaly includes providing a bias circuit coupled to a gate of at least one transistor of the power amplifier. The method also includes providing, by the bias circuit, a bias voltage to the gate. The bias circuit has a load characteristic that intersects a current versus gate voltage curve for the gate at a frequency of operation of the power amplifier only once and that exhibits a low impedance at the intersection of the load characteristic with the current versus gate curve of the gate.

REFERENCES:
patent: 6759906 (2004-07-01), Matsunaga et al.
patent: 6943631 (2005-09-01), Scherrer et al.

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