Method and system for analyzing defects of an integrated...

Semiconductor device manufacturing: process – With measuring or testing

Reexamination Certificate

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C257SE21529, C702S083000

Reexamination Certificate

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10801954

ABSTRACT:
Method and apparatus for efficiently analyzing visual defects of an integrated circuit wafer in the manufacturing process thereof by utilizing an asymmetric visual defect review methodology that can effectively extract high yield-killing defects out of numerous reported defects within the limited capacity and manpower available for review. Roughly described, the method comprises inspecting the semiconductor wafer, thereby obtaining the defect location and defect size, sampling the defects asymmetrically by determining asymmetrical defect review ratios, and thereby reviewing the defects asymmetrically. Also described is a method of asymmetrically sampling visual defects that can effectively extract out high yield-killing defects from a mass of defects by determining asymmetric defect review ratios, and a system for use in sampling visual defects asymmetrically.

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patent: 2005/0158887 (2005-07-01), Simmons
Ingrid Peterson et al. “Effective Lithography Defect Monitoring” Lithography Inspection 2003, pp. 39-48.
Jeff Lin et al. “Increasing Learning Rate On Copper Processes” Yield Management Solutions, 1999, pp. 28-31.
KLA Tencor “Defect Source Identification Using ESA in Klarity ACE” Applications Note, Nov. 2001, pp. 1-7.

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