Amplifiers – With semiconductor amplifying device – Including frequency-responsive means in the signal...
Reexamination Certificate
2011-03-01
2011-03-01
Nguyen, Khanh V (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including frequency-responsive means in the signal...
C330S190000, C330S276000
Reexamination Certificate
active
07898340
ABSTRACT:
A power amplifier includes a transistor, a transmission line transformer, and a capacitor. The transistor is operable to receive a signal and to generate an amplified signal. The transistor has a source, a drain, and a gate. The gate has a first impedance and is operable to receive the signal to be amplified. The transmission line transformer has a first, second, third, and fourth port, the first port being coupled to the gate of the transistor and the third port, and the fourth port being coupled to a source device having a second impedance. The capacitor has a first end and a second end. The first end of the capacitor is coupled to the second port of the transmission line transformer and the second end is coupled to a ground.
REFERENCES:
patent: 4647867 (1987-03-01), Butler et al.
patent: 5179461 (1993-01-01), Blauvelt et al.
patent: 5726603 (1998-03-01), Chawla et al.
patent: 6407647 (2002-06-01), Apel et al.
patent: 0 920 125 (1999-06-01), None
Bahl, I., “Broadband and Compact Impedance Transformers for Microwave Circuits,” Microwave Magazine, vol. 7, Issue 4, Aug. 2006, pp. 56-62.
Bahl, I., “2-8 GHz 8W Power Amplifier MMIC Developed Using MSAG MESFET Technology,” Microwave and Wireless Components Letters, vol. 18, Issue 1, Jan. 2008, pp. 52-54.
Kian Sen Ang et al., “Analysis and Design of Coupled Line Impedance Transformers,” DSO National Laboratories, 20 Science Park Drive, Singapore, 118230, MTTS 2004 Digest, pp. 1951-1954.
PCT, Notification of Transmittal of the International Search Report and the Written Opinion of the International Searching Authority, or the Declaration, PCT Rule 44.1), International Application No. PCT/US2009/060411, mailed Jan. 29, 2010, 15 pages.
Jin et al., “A 70-GHz Transformer-Peaking Broadband Amplifier in 0.13-um CMOS Technology,” Microwave Symposium Digest, 2008 IEEE MTT-S International, Jun. 15, 2008, XP031343325, ISBN: 978-1-4244-1780-3, pp. 285-288.
Horn et al., “Integrated Transmission Line Transformer,” Microwave Symposium Digest, 2004 IEEE MTT-S International, Jun. 6-11, 2004, XP010727263, ISBN: 978-0-7803-8331-9, pp. 201-204.
Kunasani et al., “Multilayer Aperture-Coupled Broadside Microstrip Lines,” Microwave Symposium Digest 1995, IEEE MTT-S International, May 16, 1995, ISBN: 978-0-7803-2581-4, XP010612567, pp. 1367-1369.
El-Gharniti et al., “3-5-GHz SiGe UWB LNA Using On-Chip Transformer for Broadband Matching,” Solid-State Circuits Conference, 2006, ESSCIRC 2006, Proceedings of the 32nd European, IEEE, XP0301046900, ISBN: 978-1-4244-0303-5, pp. 255-258, Sep. 1, 2006.
Heston John G.
Mooney Jon
Baker & Botts L.L.P.
Nguyen Khanh V
Raytheon Company
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