Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2009-05-12
2010-12-07
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185030, C365S185200, C365S185220, C365S185280, C365S185290
Reexamination Certificate
active
07848152
ABSTRACT:
A method and system for adaptively finding reference voltages for reading data from a multi-level cell (MLC) flash memory is disclosed. According to one embodiment, information about an initial threshold voltage distribution is firstly provided. A first threshold voltage in the initial threshold voltage distribution is then associated with a second threshold voltage in a shifted threshold voltage distribution to be determined, such that the information corresponding to the first threshold voltage is approximate to the information corresponding to the second threshold voltage. Accordingly, initial reference voltage or voltages of the initial threshold voltage distribution are shifted with an amount approximate to difference between the first threshold voltage and the second threshold voltage, thereby resulting in new reference voltage or voltages for reading the data from the MLC flash memory.
REFERENCES:
patent: 2008/0181010 (2008-07-01), Chen et al.
patent: 2008/0205136 (2008-08-01), Wang et al.
patent: 2008/0263266 (2008-10-01), Sharon et al.
patent: 2009/0290426 (2009-11-01), Moschiano et al.
patent: WO 2008/111058 (2008-09-01), None
Cho Shih-Keng
Chou Ming-Hung
Huang Chien-Fu
Huang Han-Lung
Ho Hoai V
Skymedi Corporation
Squire Sanders & Dempsey L.L.P.
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