Method and structure to reset multi-element MTJ

Electricity: measuring and testing – Magnetic – Magnetometers

Reexamination Certificate

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C324S207210, C324S249000

Reexamination Certificate

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11888854

ABSTRACT:
The process margin for the manufacture of devices formed from multi-element MTJ or GMR devices has been widened by providing a method and structure to reset the magnetization directions of all pinned layers simultaneously so that their directions of magnetization become evenly distributed. This has the effect of minimizing non-linearity and hysteresis in these devices during their subsequent operation.

REFERENCES:
patent: 6529114 (2003-03-01), Bohlinger et al.
patent: 6930479 (2005-08-01), Xiao et al.
patent: 2006/0071655 (2006-04-01), Shoji
patent: 2006/0170529 (2006-08-01), Shoji
Co-pending U.S. Appl. No. 11/788,912, filed Apr. 23, 2007, “MTJ Sensor Including Domain Stable Free Layer”, Assigned to the Same Assignee as the Present Invention.

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