Method and structure of monolithically integrated IC-MEMS...

Details Method and structure of monolithically integrated IC-MEMS... Method and structure of monolithically integrated IC-MEMS...

2009-12-09

2011-12-06

Garber, Charles (Department: 2812)

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

C438S455000, C438S459000, C331S154000, C331S1160FE, C331S1170FE, C331S1070DP, C257S459000, C257SE21122, C257SE23020, C257SE23040

Reexamination Certificate

active

08071398

ABSTRACT:
The present invention relates to integrating an inertial mechanical device on top of an IC substrate monolithically using IC-foundry compatible processes. The IC substrate is completed first using standard IC processes. A thick silicon layer is added on top of the IC substrate. A subsequent patterning step defines a mechanical structure for inertial sensing. Finally, the mechanical device is encapsulated by a thick insulating layer at the wafer level. Compared with the incumbent bulk or surface micromachined MEMS inertial sensors, vertically monolithically integrated inertial sensors provided by embodiments of the present invention have one or more of the following advantages: smaller chip size, lower parasitics, higher sensitivity, lower power, and lower cost.

REFERENCES:
patent: 6635509 (2003-10-01), Ouellet
patent: 2006/0087717 (2006-04-01), McGinley et al.
patent: 2006/0274399 (2006-12-01), Yang
patent: 2007/0097487 (2007-05-01), Yang et al.
patent: 2010/0075481 (2010-03-01), Yang
(“A Resonant Accelerometer with Two-Stage Micro-leverage Mechanisms Fabricated by SOI-MEMS Technology”, IEEE Sensors Journal, 5 (6), pp. 1214-1223, 2005 ).

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