Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
1999-03-02
2001-12-04
Picardat, Kevin M. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S499000, C257S528000
Reexamination Certificate
active
06326673
ABSTRACT:
SUMMARY OF THE INVENTION
In view of the above, an object of the invention is to provide a method and a structure of manufacturing an inductor with a high quality factor and an air trench in a monolithic circuit. The inductor manufactured by the invention has lower series resistance and a lower parasitic capacitance. Therefore, the inductor of the invention has lower energy losses, a higher quality factor and a higher operating frequency.
To attain the above-stated object, an inductor in a monolithic circuit according to the invention has the following structure. A plurality of spiral metal lines formed over a substrate. A plurality of dielectric layers, each of which is formed between two adjacent spiral metal lines. A plurality of via plugs formed in the dielectric layers to connect two adjacent spiral metal lines to each other. A spiral air trench formed along the spacing of the spiral metal lines in the dielectric layers. In such a structure having a plurality of spiral metal lines stacked on each other with the via plugs therebetween, the series resistance thereof is greatly decreased without widening the inductor. Moveover, air contained in the spiral air trench with a lower dielectric constant can efficiently reduce the parasitic capacitance of the inductor. Hence, the inductor manufactured based on the structure has a higher quality factor.
A method of manufacturing an inductor according to the invention comprises the following steps. A plurality of spiral metal lines aligned with each other is formed over a substrate. A plurality of dielectric layers, each of which is located between two adjacent spiral metal lines, is formed over the substrate. A via plug is formed in each dielectric layer to connect two adjacent spiral metal lines. An upper dielectric layer is formed over the spiral metal lines. A spiral air trench is formed in the dielectric layers along the spacing of the of the spiral metal lines.
REFERENCES:
patent: 5793272 (1998-08-01), Burghartz et al.
patent: 6015742 (2000-01-01), Ju
Collins D. M.
Huang Jiawei
J.C. Patents
Picardat Kevin M.
Windbond Electronics Corp.
LandOfFree
Method and structure of manufacturing a high-Q inductor with... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and structure of manufacturing a high-Q inductor with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and structure of manufacturing a high-Q inductor with... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2594210