Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2008-03-24
2010-11-30
Menz, Douglas M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S414000, C438S630000
Reexamination Certificate
active
07843067
ABSTRACT:
The present disclosure relates to a microelectronic structure and the manufacture of the microelectronic structure. Specifically, the disclosure relates to an interconnect barrier layer between a rhodium contact structure and a copper interconnect structure in a microelectronic structure. The microelectronic structure provides for low resistance in microelectronic devices.
REFERENCES:
patent: 6787912 (2004-09-01), Lane et al.
patent: 7405154 (2008-07-01), Cabral et al.
Cotte John M.
Haran Balasubramanian
Parks Christopher C.
Shao Xiaoyan
Simonyi Eva E.
Connolly Bowe Lodge & Hutz LLP
International Business Machines - Corporation
Menz Douglas M
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