Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Patent
2000-03-16
2000-12-26
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
257349, 257500, 257638, H01L 2900, H01L 2358
Patent
active
061664200
ABSTRACT:
A method and structure for forming an integrated circuit wafer comprises forming a substrate having first and second portions, depositing a first insulator over the substrate, patterning the first insulator such that the first insulator remains only over the first portion, depositing a second insulator over substrate (the first insulator has different thermal dissipation characteristics than the second insulator), polishing the second insulator to form a planar surface, and attaching a silicon film over the first insulator and the second insulator.
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Gauthier Jr. Robert J.
Schepis Dominic J.
Voldman Steven H.
Henkler, Esq. Richard A.
International Business Machines - Corporation
Ngo Ngan V.
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