Method and structure of electric field poling of Ti...

Details Method and structure of electric field poling of Ti... Method and structure of electric field poling of Ti...

2006-12-26

2006-12-26

Connelly-Cushwa, Michelle (Department: 2874)

Optical waveguides

Planar optical waveguide

C385S004000, C385S014000, C359S321000

Reexamination Certificate

active

07155102

ABSTRACT:
A method and structure are disclosed with a simplified approach for fabricating a LiNbO3 wafer with Ti indiffusion wafeguide on the surface that is domain inverted. The method involves indiffusing Ti into LiNbO3with a predefined temperature and time indiffusion range, a Li enriched and dry oxygen atmosphere, which allows making optical waveguides on the z− crystal face without any significant domain inversion occurring on the z+ face of the crystal. This allows for subsequent poling without the need of any additional removal of the thin domain inverted layer which would otherwise appear on the z+ face. Even in instance where a thin domain inversion layer is formed, it is insufficient thick to prevent poling, eliminating the need for the grinding process.

REFERENCES:
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EP Search Report, Patent Application No. 05 105 352.8, dated Oct. 7, 2005.

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