Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient – With high resistivity
Reexamination Certificate
2006-06-20
2006-06-20
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
With specified impurity concentration gradient
With high resistivity
C257S355000, C438S081000
Reexamination Certificate
active
07064418
ABSTRACT:
A method and a structure of a diode are provided. The diode is used in an electrostatic discharge protection circuit using TFT (Thin Film Transistor) fabrication technology. A semiconductor layer is formed on a substrate. A first region of a first carrier concentration is formed in the semiconductor layer. A second region of a second carrier concentration is formed in the semiconductor layer. An insulator is formed on the semiconductor layer. The insulator layer is etched to form at least a contact window. The contact window exposes a portion of an upper surface of the semiconductor layer. A metal layer is formed on the insulator layer. The metal layer fills up the contact window to contact the semiconductor layer.
REFERENCES:
patent: 5610790 (1997-03-01), Staab et al.
patent: 6118154 (2000-09-01), Yamaguchi et al.
patent: 6329691 (2001-12-01), Finzi
patent: 2001/0015445 (2001-08-01), Nemoto
patent: 2004/0105203 (2004-06-01), Ker et al.
Deng Chih-Kang
Ker Ming-Dou
Li Ying-Hsin
Shih An
Tseng Tang-Kui
Bednarek Michael
Ho Tu-Tu
Pillsbury Winthrop Shaw & Pittman LLP
Toppoly Optoelectronics Corp.
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