Method and structure for selectively coupling a resistive elemen

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – Integrated structure

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

327170, 327379, 327534, H01L 2500

Patent

active

056569700

ABSTRACT:
An output driver including pull-up and pull-down output transistors is formed in a silicon substrate. The source and the drain of the pull-up output transistor are formed in a common bulk region of the substrate. A bulk potential control circuit for controlling the voltage of the bulk region, a resistive element and a gate drive control circuit are also formed in the silicon substrate. A layer of interconnect formed over a top surface of the silicon substrate may selectively couple into the output driver circuit one or more of the resistive element between a source of the pull-down output transistor and a reference voltage source, the bulk potential control circuit to control the voltage of the bulk region of the silicon substrate, and the gate drive control circuit to control the rate of change of voltage on the gate of the pull-down transistor as a function of the voltage on this gate.

REFERENCES:
patent: 4087704 (1978-05-01), Mehta et al.
patent: 4985644 (1991-01-01), Okihara et al.
patent: 5008568 (1991-04-01), Leung et al.
patent: 5028818 (1991-07-01), Go Ang et al.
patent: 5097149 (1992-03-01), Lee
patent: 5138194 (1992-08-01), Yoeli
patent: 5148056 (1992-09-01), Glass et al.
patent: 5191244 (1993-03-01), Runaldue et al.
patent: 5214320 (1993-05-01), Truong
patent: 5218239 (1993-06-01), Boomer
patent: 5254890 (1993-10-01), Wang et al.
patent: 5315173 (1994-05-01), Lee et al.
patent: 5426376 (1995-06-01), Wong et al.
patent: 5430403 (1995-07-01), Moyer et al.
patent: 5438545 (1995-08-01), Sim

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method and structure for selectively coupling a resistive elemen does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and structure for selectively coupling a resistive elemen, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and structure for selectively coupling a resistive elemen will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-162930

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.