Patent
1988-10-18
1989-12-05
James, Andrew J.
357 234, 357 63, 357 71, H01L 2904, H01L 2978, H01L 2348
Patent
active
048856274
ABSTRACT:
A buried contact structure to decrease the spreading resistance of various circuit elements of semiconductor devices such as transistors and for reducing the resistance of polysilicon wires typically used in short lengths to connect the circuit elements to other metallic wires. The buried contact structure more specifically includes a phosphorous diffusion superimposed on the field implant which includes the source and/or drain of the transistor device. An overlayed layer of polysilicon is then disposed to make contact with the buried contact diffusion. The field implant used for the source and drain may, for example, be boron. The buried contact structure has a lower resistance than the field implant and therefore provides a lower resistance path for the device current.
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Goodwin John J.
International Business Machines - Corporation
James Andrew J.
Ngo Ngan Van
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