Method and structure for reducing noise in CMOS image sensors

Details Method and structure for reducing noise in CMOS image sensors Method and structure for reducing noise in CMOS image sensors

2011-04-05

2011-04-05

Gurley, Lynne A (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S222000, C257S291000, C257S294000, C257SE27133, C257SE31121

Reexamination Certificate

active

07919827

ABSTRACT:
A method and device is disclosed for reducing noises in CMOS image sensors. An improved CMOS image sensor includes a light sensing structure surrounded by a support feature section. An active section of the light sensing structure is covered by no more than optically transparent materials. A light blocking portion includes a black light filter layer and an opaque layer covering the support feature section. The light blocking portion may also cover a peripheral portion of the light sensing structure. The method for forming the CMOS image sensors includes using film patterning and etching processes to selectively form the opaque layer where the light blocking portion is desired but not over the active section.

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