Method and structure for reducing gate leakage and threshold...

Details Method and structure for reducing gate leakage and threshold... Method and structure for reducing gate leakage and threshold...

2005-01-04

2005-01-04

Elms, Richard (Department: 2824)

Static information storage and retrieval

Powering

C365S185160, C365S185240, C365S228000, C365S188000

Reexamination Certificate

active

06839299

ABSTRACT:
A memory device has a memory cell including a plurality of active devices, which can be switched on by an applied threshold voltage. A power line is coupled to at least one storage node by one of the active devices. One other of the active devices couples a virtual ground to the storage node. Potentials of the power line and the virtual ground cause the plurality of active devices to be selectively operated in near subthreshold and/or superthreshold regimes in accordance with a mode of operation.

REFERENCES:
patent: 4980859 (1990-12-01), Guterman et al.
patent: 5748530 (1998-05-01), Gotou et al.
patent: 6069519 (2000-05-01), Song
patent: 6639827 (2003-10-01), Clark et al.

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