Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-04-12
2011-04-12
Ghyka, Alexander G (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S762000, C257SE21165
Reexamination Certificate
active
07923838
ABSTRACT:
A semiconductor structure in which the contact resistance in the contact opening is reduced as well as a method of forming the same are provided. This is achieved in the present invention by replacing conventional contact metallurgy, such as tungsten, or a metal silicide, such as Ni silicide or Cu silicide, with a metal germanide-containing contact material. The term “metal germanide-containing” is used in the present application to denote a pure metal germanide (i.e., MGe alloy) or a metal germanide that includes Si (i.e., MSiGe alloy).
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Lavoie Christian
Murray Conal E.
Rodbell Kenneth P.
Ghyka Alexander G
International Business Machines - Corporation
Percello, Esq. Louis J.
Scully Scott Murphy & Presser
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