Method and structure for providing improved insulation in VLSI a

Details Method and structure for providing improved insulation in VLSI a Method and structure for providing improved insulation in VLSI a

1990-09-28

1992-09-01

Wojciechowicz, Edward J.

357 55, 357 69, 357 74, H01L 2348

Patent

active

051444119

ABSTRACT:
An improved VLSI or ULSI structure and a method of forming the same are provided. The structure starts with a base member having a plurality of supports formed thereon and extending upwardly therefrom. A selectively removable material is deposited on the base member and around the supports. An insulating cap is formed over the supports and the removable material. Access openings are provided through the cover (or base) and the removable material is removed through the access openings. Thereafter a partial vacuum is formed in the space evacuated by the removable material, and the access openings sealed to provide a dielectric medium around the supports and between the base and cap member having a dielectric constant of less than 2.0.

REFERENCES:
patent: 3689992 (1972-09-01), Schutze et al.
patent: 3908186 (1975-09-01), Anazawa et al.
patent: 3925880 (1975-12-01), Rosvold
patent: 4975762 (1990-12-01), Stradley

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