Method and structure for preventing bonding pad peel back

Details Method and structure for preventing bonding pad peel back Method and structure for preventing bonding pad peel back

1998-04-13

2000-02-15

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438397, 438639, 438640, 438701, 438702, 438739, 438740, 438612, 438614, H01L 21302

Patent

active

060252774

ABSTRACT:
Bonding pad structures may be fabricated by forming a layered structure including a first conducting layer and first and second insulating layers on top of a substrate. Openings are etched through the first and second insulating layers, with the openings being wider in the first insulating layer than in the second insulating layer. The etching process may be carried out in two steps, with the second step preferentially isotropically etching the first insulating layer so that the openings are wider in the first insulating layer than in the second insulating layer and a portion of the second insulating layer overhangs the opening above the first insulating layer. Metal is then deposited within the openings and on top of the second insulating layer. An interlocking structure is formed with the conducting material extending underneath of the overhang portions of the second insulating layer. A passivation layer may be formed over the conducting material. The conducting material may include a barrier layer, a plug, and a top bond pad layer.

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