Method and structure for passivating a PN junction

Details Method and structure for passivating a PN junction Method and structure for passivating a PN junction

1983-02-02

1984-09-25

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

357 52, 427 86, 427 87, 427 95, H01L 21314

Patent

active

044735979

ABSTRACT:
A technique for passivating a PN junction adjacent a surface of a semiconductor substrate comprises coating the area of the surface adjacent the PN junction with a layer of hydrogenated amorphous silicon containing between about 5 and about 50 atomic percent of hydrogen.

REFERENCES:
patent: 3743847 (1973-07-01), Boland
patent: 3806361 (1974-04-01), Lehner
patent: 3971061 (1976-07-01), Matsushita et al.
patent: 4001873 (1977-01-01), Kajiwara et al.
patent: 4064521 (1977-12-01), Carlson
patent: 4084986 (1978-04-01), Aoki et al.
patent: 4109271 (1978-08-01), Pankove
patent: 4113514 (1978-09-01), Pankove et al.
patent: 4134125 (1979-01-01), Adams
patent: 4362766 (1982-12-01), Dannhauser et al.
Fritzsche et al., "Amorphous Semiconducting Silicon-Hydrogen Alloys" Solid State Technology/Jan. 1978, pp. 55-60.
Chittick et al., "The Preparation and Properties of Amorphous Silicon" Journal Electrochemical Society: Solid State Science, vol. 116, No. 1, Jan. 1969, pp. 77-81.
Photoluminescence of Hydrogenated Amorphous Silicon, Applied Physics Letters, vol. 31, No. 7, Oct. 1, 1977, pp. 450-451.

Affiliated with

Also associated with

Rating

Method and structure for passivating a PN junction does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and structure for passivating a PN junction, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and structure for passivating a PN junction will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1769682