Method and structure for manufacturing high-resistance polysilic

Details Method and structure for manufacturing high-resistance polysilic Method and structure for manufacturing high-resistance polysilic

1998-05-20

1999-10-19

Monin, Donald

Semiconductor device manufacturing: process

Making passive device

Resistor

438384, 257536, 257538, H01L 2702

Patent

active

059703571

ABSTRACT:
High-resistance polysilicon layers applied in 4T SRAM memory cells serving as loads, are manufactured by a simple method according to the invention. In the small-scale 4T SRAM memory cell process, it is not possible to fabricate traditional polysilicon loads manufactured by the prior art with a desired high degree of resistance. As a result, the miniaturization of 4T SRAM memory cells has been limited. However, in the method according to the invention, the lengths of polysilicon loads are greatly increased without increasing the sizes of corresponding memory cells, thereby efficiently increasing the resistance of the polysilicon loads. Therefore, this method according to invention can completely eliminate any limitation to the small-scale 4T SRAM memory cell process caused by the manufacture of the polysilicon loads as described above.

REFERENCES:
patent: 5352923 (1994-10-01), Boyd et al.
patent: 5602408 (1997-02-01), Watanabe et al.
patent: 5757053 (1998-05-01), Lui
patent: 5861331 (1999-01-01), Chien
patent: 5885862 (1999-03-01), Jao et al.

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