Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip
Reexamination Certificate
2005-03-22
2005-03-22
Clark, S. V. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Chip mounted on chip
C257S780000, C257S786000, C438S613000
Reexamination Certificate
active
06870270
ABSTRACT:
Method and structure for optimizing and controlling diffusional creep at metal contact interfaces are disclosed. Embodiments of the invention accommodate height variations in adjacent contacts, decrease planarization uniformity requirements, and facilitate contact bonding at lower temperatures and pressures by employing shapes and materials that respond predictably to compressive interfacing loads.
REFERENCES:
patent: 6005292 (1999-12-01), Roldan et al.
patent: 6216941 (2001-04-01), Yokoyama et al.
patent: 6495397 (2002-12-01), Kubota et al.
patent: 6555917 (2003-04-01), Heo
Harmes Michael C.
Kim Sarah E.
Kobrinsky Mauro J.
List R. Scott
Blakely , Sokoloff, Taylor & Zafman LLP
Clark S. V.
Intel Corporation
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