Method and structure for integration of phosphorous emitter...

Details Method and structure for integration of phosphorous emitter... Method and structure for integration of phosphorous emitter...

2007-11-20

2007-11-20

Tran, Minh-Loan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S198000, C257SE21372, C257SE29188, C438S310000, C438S312000

Reexamination Certificate

active

10997534

ABSTRACT:
According to one exemplary embodiment, a heterojunction bipolar transistor includes a base situated on a substrate. The heterojunction bipolar transistor can be an NPN silicon-germanium heterojunction bipolar transistor, for example. The heterojunction bipolar transistor further includes a cap layer situated on the base, where the cap layer includes a barrier region. The barrier region can comprises carbon and has a thickness, where the thickness of the barrier region determines a depth of an emitter-junction of the heterojunction bipolar transistor. An increase in the thickness of the barrier region can cause a decrease in the depth of the emitter-base junction. According to this exemplary embodiment, the heterojunction bipolar transistor further includes an emitter situated over the cap layer, where the emitter comprises an emitter dopant, which can be phosphorus. A diffusion retardant in the barrier region of the cap layer impedes diffusion of the emitter dopant.

REFERENCES:
patent: 5164797 (1992-11-01), Thornton
patent: 6437376 (2002-08-01), Ozkan
patent: 6593640 (2003-07-01), Kalnitsky et al.
patent: 2003/0080394 (2003-05-01), Babcock et al.

Affiliated with

Also associated with

Rating

Method and structure for integration of phosphorous emitter... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and structure for integration of phosphorous emitter..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and structure for integration of phosphorous emitter... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3878699