Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Accelerating switching
Patent
1994-03-31
1996-07-02
Callahan, Timothy P.
Miscellaneous active electrical nonlinear devices, circuits, and
Gating
Accelerating switching
327377, 327314, 330296, H03G 330
Patent
active
055326390
ABSTRACT:
According to the present invention, schottky diode technology is used to limit the amount of stored charge which must be overcome by an RF transistor during the portion of an RF cycle when the RF transistor attempts to turn on. Limiting the amount of stored charge stabilizes the bias point of the RF transistor on its load line so that the mode of operation of the RF transistor may be maintained. Thus, a schottky diode is placed in a RF transistor circuit and acts as a current sink to bleed stored charge to ground. Placement of the schottky diode close to the RF transistor provides a number of benefits, including introduction of the schottky diode at a low impedance point of the RF transistor circuit, minimization of lead/lag phase angles introduced by intervening matching elements, and minimization of resonance effects. The maximum benefit may be realized by placing the schottky diode as close to the RF transistor as possible, with especially good results possible by placing the schottky diode inside the RF transistor package, such as on a MOSCAP or on the RF transistor die itself. Furthermore, placement of the schottky diode within the matching network of the RF transistor limits the maximum negative deviation of the input signal to -0.2 to -0.3 volts. Placement of the schottky diode within the RF transistor package causes the schottky diode to be forward biased during the negative half of the RF input cycle, thereby not allowing the RF transistor's base-emitter junction to be sufficiently reverse biased to store charge.
REFERENCES:
patent: 3327131 (1961-12-01), Grimmer
patent: 3345578 (1964-03-01), Shuda
patent: 3382445 (1968-05-01), Williams
patent: 3513406 (1970-05-01), Leuthauser
patent: 5319315 (1994-06-01), Belcher
patent: 5363058 (1994-11-01), Sasaki
Transistor Runs Pseudo Class A In Power Driver (Electronic Design Nov. 25, 1959).
Electronic Circuits (Donald L. Schilling, pp. 43-45) Third Edition 1989.
Rotay Craig J.
Zielke Christopher
Callahan Timothy P.
Jorgenson Lisa K.
Lam T.
Larson Renee M.
SGS-Thomson Microelectronics Inc.
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