Method and structure for front-side gettering of silicon-on-insu

Details Method and structure for front-side gettering of silicon-on-insu Method and structure for front-side gettering of silicon-on-insu

1995-12-20

1997-07-08

Dang, Trung

Fishing, trapping, and vermin destroying

437 12, 437 62, 437974, H01L 21306

Patent

active

056460538

ABSTRACT:
A method of gettering an SOI wafer from the front side of the wafer includes depositing a gettering layer, such as polysilicon, on the SOI layer and annealing the SOI wafer with the gettering layer in place. A polish stop structure, which can be deposited before or after the gettering layer, provides a means for selectively removing the gettering layer from the SOI wafer without damaging the surface or eroding the thickness of the SOI layer.

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Jablonski, et al., "Gettering of Cu and Ni Impurities in Simox Wafers", J. Electrochem. Soc., vol. 142, No. 6, Jun. 1995, pp. 2059-2066.
H. D. Chiou, et al., "Gettering of Bonded SOI Layers", Abstrat No. 194, Discrete and Materials Technology Group, Motorola, Inc. pp. 325-326.
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U.S. Patent Application, Serial No. 08/575,421 Entitled: "Method and Structures for Lateral Gettering of Silicon-on-Insulator Substrates", Devendra Sadana, et al., Docket No. FI9-95-155, Filed Dec. 20, 1995.

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