Method and structure for forming strained SI for CMOS devices

Details Method and structure for forming strained SI for CMOS devices Method and structure for forming strained SI for CMOS devices

2006-09-22

2008-09-30

Smoot, Stephen W (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Non-single crystal, or recrystallized, material containing...

C257S288000, C257S622000, C257SE29084

Reexamination Certificate

active

07429752

ABSTRACT:
A semiconductor device includes a semiconductor substrate having at least one gap, extending under a portion of the semiconductor substrate. A gate stack is on the semiconductor substrate. A strain layer is formed in at least a portion of the at least one gap. The strain layer is formed only under at least one of a source region and a drain region of the semiconductor device.

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