Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material containing...
Reexamination Certificate
2011-04-19
2011-04-19
Smoot, Stephen W (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material containing...
C257S288000, C257S622000, C257SE29084
Reexamination Certificate
active
07928443
ABSTRACT:
A semiconductor device includes a semiconductor substrate having at least one gap, extending under a portion of the semiconductor substrate. A gate stack is on the semiconductor substrate. A strain layer is formed in at least a portion of the at least one gap. The strain layer is formed only under at least one of a source region and a drain region of the semiconductor device.
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Steegen An L.
Yang Haining S.
Zhang Ying
Abate Joseph P.
International Business Machines - Corporation
Roberts Mlotkowski Safran & Cole P.C.
Smoot Stephen W
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