Method and structure for forming an integrated circuit pattern o

Details Method and structure for forming an integrated circuit pattern o Method and structure for forming an integrated circuit pattern o

1993-07-06

1995-01-03

Quach, T. N.

Fishing, trapping, and vermin destroying

437228, 437241, 1566591, 156653, H01L 2131

Patent

active

053786599

ABSTRACT:
Reflective notching of a photoresist pattern (20), generated over reflective materials on a semiconductor substrate (12), is minimized by using an anti-reflective layer (20) of silicon-rich silicon nitride. The layer of silicon-rich silicon nitride is formed over the reflective materials and a layer of photoresist is then formed over the silicon-rich silicon nitride. The photoresist layer is then photolithographically patterned to form an integrated circuit pattern (20). The silicon-rich silicon nitride layer has an absorptive index of greater than 0.25, which allows it to be used as an anti-reflective layer with photolithographic patterning systems having ultraviolet and deep ultraviolet exposure wavelengths.

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