Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2011-03-22
2011-03-22
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S103000, C257SE33028, C257SE33034, C257S190000, C257S200000, C438S094000
Reexamination Certificate
active
07910937
ABSTRACT:
A method and structure for fabricating III-V nitride layers on silicon substrates includes a substrate, a transition structure having AlGaN, AlN and GaN layers, and a superlattice structure having AlGaN and GaN layers. In the invention, the large lattice mismatch (17%) between GaN and silicon is solved by using AlN as the first buffer layer with a 5:4 coincidence between AlN(0001) and Si(111) lattice to reduce the lattice mismatch to 1.3%.
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Chen Peng
Chua Soo Jin
Miao Zhonglin
Tripathy Sudhiranjan
Agency for Science Technology and Research
Birch & Stewart Kolasch & Birch, LLP
Jackson, Jr. Jerome
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