Method and structure for extracting lateral PNP transistor basew

Details Method and structure for extracting lateral PNP transistor basew Method and structure for extracting lateral PNP transistor basew

1989-11-06

1991-02-19

Eisenzopf, Reinhard J.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324158R, 324 731, 437 8, G01R 3126, G01R 3100

Patent

active

049947362

ABSTRACT:
A method to extract at wafer probe the variation of lateral PNP basewidth of transistors formed in an integrated circuit which uses two lateral PNP devices having different and known basewidths before fabrication of the devices in the integrated circuit and then measuring the ratio of the saturation currents at wafer probe. The actual basewidth of the lateral PNP transistor is then related to the difference of the known basewidths of the two lateral PNP transistors and the ratio of the saturation measured currents thereof.

REFERENCES:
patent: 3465427 (1969-09-01), Barson et al.
patent: 4079505 (1978-03-01), Hirano et al.
patent: 4144493 (1979-03-01), Lee et al.
patent: 4413271 (1983-11-01), Gontowski, Jr. et al.
patent: 4542340 (1985-09-01), Chakrauarti et al.

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