Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2011-05-31
2011-05-31
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S110000, C438S118000, C438S459000, C438S462000, C438S464000, C257SE21214, C257SE21237, C257SE21599
Reexamination Certificate
active
07951688
ABSTRACT:
A method for obtaining individual dies from a semiconductor structure is disclosed. The semiconductor structure includes a device layer, and the device layer in turn includes active regions separated by predefined spacings. Thick metal is selectively formed on backside of the device layer such that thick metal is formed on backside of active regions but not on backside of the predefined spacings. The semiconductor structure is then cut along the predefined spacings to separate the active regions with thick metal on their backside into individual dies.
REFERENCES:
patent: 4729971 (1988-03-01), Coleman
patent: 5665655 (1997-09-01), White
patent: 5789307 (1998-08-01), Igel et al.
patent: 5977641 (1999-11-01), Takahashi et al.
patent: 6033489 (2000-03-01), Marchant et al.
patent: 6104062 (2000-08-01), Zeng
patent: 6429481 (2002-08-01), Mo et al.
patent: 6521497 (2003-02-01), Mo
patent: 6613214 (2003-09-01), Dordi et al.
patent: 6710406 (2004-03-01), Mo et al.
patent: 6828195 (2004-12-01), Mo et al.
patent: 6836023 (2004-12-01), Joshi et al.
patent: 6884717 (2005-02-01), Desalvo et al.
patent: 7098108 (2006-08-01), Zeng
patent: 7132712 (2006-11-01), Kocon et al.
patent: 7148111 (2006-12-01), Mo et al.
patent: 2003/0003724 (2003-01-01), Uchiyama et al.
patent: 2003/0119281 (2003-06-01), Suzuki et al.
patent: 2005/0003586 (2005-01-01), Shimanuki et al.
patent: 2005/0167742 (2005-08-01), Challa et al.
patent: 2006/0133443 (2006-06-01), Chua et al.
patent: 2007/0020884 (2007-01-01), Wang et al.
patent: 2007/0173021 (2007-07-01), Kocon et al.
patent: 2007/0235886 (2007-10-01), Yilmaz et al.
Baliga, pp. 335-349 fromPower Semiconductor Devices, 1996.
Jian et al., “Effects on Etching Rates of Copper in Ferric Chloride Solutions,”IEMT/IMC Symposium, 2nd, Symposium held Apr. 15-17, 1998, pp. 144-148.
Jostan et al., “Regeneration Process for Etching Solutions in the Production of Printed Circuits,” Galvanotechnik, 70(10):940-945, article in German, English abstract included (1979).
Loher et al., “Smart PCBs Manufacturing Technologies,”IEEE9 pages from 6thInternational Conference on Electronic Packaging Technology held Aug. 30, 2005 to Sep. 2, 2005 in Shenzhen, China.
International Search Report of Dec. 2, 2008 for corresponding International Application No. PCT/US08/77737.
Written Opinion of Dec. 2, 2008 for corresponding International Application No. PCT/US08/77737.
Kim Suku
Li Minhua
Murphy James J.
Reynolds Matthew
Sim Gordon
Estrada Michelle
Fairchild Semiconductor Corporation
Kilpatrick Townsend & Stockton LLP
LandOfFree
Method and structure for dividing a substrate into... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and structure for dividing a substrate into..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and structure for dividing a substrate into... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2681232