Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2005-06-14
2005-06-14
Sarkar, Asok Kumar (Department: 2829)
Semiconductor device manufacturing: process
With measuring or testing
C438S770000
Reexamination Certificate
active
06905893
ABSTRACT:
A method is provided for determining a concentration profile of an impurity within a layer of a semiconductor topography. The method may include exposing the layer and an underlying layer to oxidizing conditions. In addition, the method may include comparing thickness measurements of total dielectric above the underlying layer taken before and after exposing the topography to oxidizing conditions . In some cases, the comparison may include plotting pre-oxidation thickness measurements versus post-oxidation measurements. In other embodiments, the comparison may include determining differences between the pre-oxidation and post-oxidation thickness measurements and correlating the differences to concentrations of the impurity. In some cases, such a correlation may include subtracting a concentration of the impurity at a first location along the semiconductor topography from a concentration of the impurity at a second location along the semiconductor topography.
REFERENCES:
patent: 5043224 (1991-08-01), Jaccodine et al.
patent: 5298860 (1994-03-01), Kato
patent: 6060374 (2000-05-01), Lin et al.
patent: 52-137275 (1977-11-01), None
patent: 52-105369 (1978-09-01), None
patent: 11-233578 (1999-08-01), None
patent: 1052686 (2000-11-01), None
IBM Technical Disclosure Bulletin, Jun. 1971, NN 7106259, vol. 14, Issue No. 1, p 259.
Narayanan et al., “Monitoring Nitrogen Profiles in Ultrathin Gate Dielectrics,” Electrochemical and Solid-State Letters, vol. 5, No. 7, 2002, pp. F15-F17.
Narayanan Sundar
Ramkumar Krishnaswamy
Conley & Rose, P.C.
Cypress Semiconductor Corp.
Daffer Kevin L.
Lettang Mollie E.
Sarkar Asok Kumar
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