Method and structure for detecting the concentration of oxygen i

Measuring and testing – Gas analysis – Gas chromatography

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73 27R, 422 98, G01N 3106

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active

041988515

ABSTRACT:
A field-effect transistor structure is utilized for detecting the concentration of oxygen in a substance to which the structure is exposed. The structure includes a semi-conductor substrate material having one doping polarity, a pair of spaced apart diffusion regions located at the surface of the substrate material and having a doping polarity opposite that of the substrate material, electrical insulator material overlying the diffusion regions and the surface of the substrate material lying therebetween, a membrane composed of an oxygen binding material overlying at least a portion of the insulator material, and a reference electrode connected in circuit with the diffusion regions and the substrate material. When the membrane is exposed to a substance containing oxygen, the work function of the membrane is changed and this change affects the conductivity between the two diffusion regions which may be measured to yield an indication of the concentration of oxygen in the substance.

REFERENCES:
patent: 3831432 (1974-08-01), Cox
patent: 3999122 (1976-12-01), Winstel et al.
patent: 4020830 (1977-05-01), Johnson et al.
"Chemically Sensitive Field-Effect Transistors", Biomedical Engineering Jul. 1976 (241-245).
"Hemoglobin Studies, II. A Synthetic Material with Hemoglobin-Like Property," J.A. Chem. Soc vol. 80, 6/20/58 pp. 3168-3169, Wang.

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