Method and structure for creating ultra low resistance...

Details Method and structure for creating ultra low resistance... Method and structure for creating ultra low resistance...

2007-03-27

2007-03-27

Menz, Doug (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S734000, C257S767000

Reexamination Certificate

active

11259965

ABSTRACT:
A low resistance copper damascene interconnect structure is formed by providing a thin dielectric film such as SiC or SiOC formed on the sidewalls of the via and trench structures to function as a copper diffusion barrier layer. The dielectric copper diffusion barrier formed on the bottom of the trench structure is removed by anisotropic etching to expose patterned metal areas. The residual dielectric thus forms a dielectric diffusion barrier film on the sidewalls of the structure, and coupled with the metal diffusion barrier subsequently formed in the trench, creates a copper diffusion barrier to protect the bulk dielectric from copper leakage.

REFERENCES:
patent: 6555461 (2003-04-01), Woo et al.
patent: 6706629 (2004-03-01), Lin et al.
patent: 2002/0060363 (2002-05-01), Xi et al.
patent: 2004/0130035 (2004-07-01), Wu et al.
“Dual Damascene” Overcoming process issues, Semiconductor International (Jun. 2000).

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