Method and structure for contacting an overlying electrode...

Details Method and structure for contacting an overlying electrode... Method and structure for contacting an overlying electrode...

2006-05-09

2006-05-09

Dang, Phuc T. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Controlled by nonelectrical, nonoptical external signal

C257S421000

Reexamination Certificate

active

07042025

ABSTRACT:
A method for contacting an electrically conductive electrode overlying a first dielectric material of a structure is provided. The method includes forming a mask layer overlying the electrically conductive electrode and patterning the mask layer to form an exposed electrically conductive electrode material. At least a portion of the exposed electrically conductive electrode material is removed while an electrically conductive veil is formed adjacent the mask layer. A metal contact layer is formed such that said metal contact layer contacts the electrically conductive veil.

REFERENCES:
patent: 5641557 (1997-06-01), Ishiwata
patent: 6297987 (2001-10-01), Johnson et al.

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