Method and structure for composite trench fill

Details Method and structure for composite trench fill Method and structure for composite trench fill

2007-09-04

2007-09-04

Ngo, Ngan (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S266000, C257SE21546

Reexamination Certificate

active

10816980

ABSTRACT:
A method and structure for a composite trench fill for silicon electronic devices. On a planar silicon substrate having a first deposited layer of oxide and a second deposited layer of polysilicon, a trench is etched. Deposition and etch processes using a combination of oxide and polysilicon are used to fabricate a composite trench fill. The trench bottom and a lower portion of the walls are covered with oxide. The remaining portion of the trench volume is filled with polysilicon. The method may be used for junction field effect transistors (JFETs) and metal oxide semiconductor field effect transistors (MOSFETs).

REFERENCES:
patent: 4791462 (1988-12-01), Blanchard et al.
patent: 4835586 (1989-05-01), Cogan et al.
patent: 5602405 (1997-02-01), Terasawa
patent: 5753938 (1998-05-01), Thapar et al.
patent: 5847417 (1998-12-01), Terasaw
patent: 5861643 (1999-01-01), Chen et al.
patent: 5883406 (1999-03-01), Nishizawa
patent: 6566227 (2003-05-01), Wensley et al.
patent: 6576516 (2003-06-01), Blanchard
patent: 6707095 (2004-03-01), Chidambarrao et al.
patent: 6762447 (2004-07-01), Mandelman et al.
patent: 6818940 (2004-11-01), Matsuda
patent: 6855981 (2005-02-01), Kumar et al.
patent: 2002/0024082 (2002-02-01), Tsunashima et al.
patent: 2002/0036318 (2002-03-01), Thapar
patent: 2002/0066917 (2002-06-01), Jaiprakash et al.
patent: 2002/0125521 (2002-09-01), Schrems
patent: 2003/0013259 (2003-01-01), Chidambarrao et al.
patent: 2003/0025140 (2003-02-01), Kusters et al.
patent: 2003/0047767 (2003-03-01), Luetzen et al.
patent: 2003/0062562 (2003-04-01), Goebel et al.
patent: 2003/0082876 (2003-05-01), Mandelman et al.
patent: 2003/0168690 (2003-09-01), Karcher et al.
patent: 2003/0201480 (2003-10-01), Chidambarrao et al.
patent: 2004/0000683 (2004-01-01), JaiPrakash et al.
patent: 2004/0007728 (2004-01-01), Chang et al.
patent: 2004/0036100 (2004-02-01), Divakaruni et al.
patent: 2004/0084708 (2004-05-01), Seitz et al.
patent: 2004/0164338 (2004-08-01), Koyama
patent: 2005/0167720 (2005-08-01), Furuhata et al.
H. Ogiwara, M. Hayakawa, T. Nishimura and M. Nakaoka; “High-Frequency Induction Heating Inverter With Multi-Resonant Mode Using Newly Developed Normally-Off Type Static Induction Transistors”; Department of Electrical Engineering, Oita University, Japan; Department of Electrical Engineering, Kobe University, Japan; pp.1017-1023.
J. Baliga; “Highvoltage Junction-Gate Field Effect Transistor Wth Recessed Gates”; IEEE Transactions on Electron Devices; vol. ED-29; No. 10; Oct. 1982.
J. M. C. Stork et al.; “Small Geometry Depleted Base Bipolar Transistors (BSIT)- VLSI Devices?”; IEEE Transactions on Electron Devices; vol. ED-28; No. 11; Nov. 1981.
Nishizawa et al.; “Analysis of Static Characteristics of A Bipolar Mode Sit (BSIT)”; IEEE Transactions on Electron Devices; vol. ED-29; No. 11; Aug. 1982.
Caruso et al.; “Performance Analysis of A Bipolar Mode Fet (BMFET) With Normally Off Characteristics”; IEEE Transactions on Power Electronics; vol. 3, No. 2; Apr. 1988.
Nishizawa et al.; “Fieldeffect Transistor Versus Analog Transistor (Static Induction Transistor)”; IEEE Transactions on Electron Devices; vol. ED-24; No. 4; Apr. 1975.

Affiliated with

Also associated with

Rating

Method and structure for composite trench fill does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and structure for composite trench fill, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and structure for composite trench fill will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3723910