Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2005-05-03
2005-05-03
Tran, Michael (Department: 2818)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S386000, C438S387000, C438S388000, C438S389000, C438S390000, C438S589000
Reexamination Certificate
active
06887768
ABSTRACT:
A method and structure for a composite trench fill for silicon electronic devices. On a planar silicon substrate having a first deposited layer of oxide and a second deposited layer of polysilicon, a trench is etched. Deposition and etch processes using a combination of oxide and polysilicon are used to fabricate a composite trench fill. The trench bottom and a lower portion of the walls are covered with oxide. The remaining portion of the trench volume is filled with polysilicon. The method may be used for junction field effect transistors (JFETs) and metal oxide semiconductor field effect transistors (MOSFETs).
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Berry Renee R.
Lovoltech Inc.
Tran Michael
Wagner , Murabito & Hao LLP
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