Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Reexamination Certificate
2005-11-21
2008-08-05
Pham, Thanh V (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Bidirectional rectifier with control electrode
C257S170000, C257S409000, C257S452000, C257S484000, C257S605000, C257SE29012
Reexamination Certificate
active
07408206
ABSTRACT:
Methods and structures and methods of designing structures for charge dissipation in an integrated circuit on an SOI substrate. A first structure includes a charge dissipation ring around a periphery of the integrated circuit chip and one or more charge dissipation pedestals physically and electrically connected to the charge dissipation pedestals. The silicon layer and bulk silicon layer of the SOI substrate are connected by the guard ring and the charge dissipation pedestals. The ground distribution grid of the integrated circuit chip is connected to an uppermost wire segment of one or more charge dissipation pedestals. A second structure, replaces the charge dissipation guard ring with additional charge dissipation pedestal elements.
REFERENCES:
patent: 4994883 (1991-02-01), Chang et al.
patent: 2002/0167053 (2002-11-01), Huang
patent: 2007/0013072 (2007-01-01), Ellis-Monaghan et al.
patent: 2007/0218667 (2007-09-01), Rider
patent: 2007/0221990 (2007-09-01), Cote et al.
DeVries Kenneth L.
Greco Nancy Anne
Preston Joan
Runyon Stephen Larry
Capella Steven
International Business Machines - Corporation
Pham Thanh V
Schmeiser Olsen & Watts
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