Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Metallic housing or support
Reexamination Certificate
2005-06-24
2008-11-04
Sarkar, Asok K. (Department: 2891)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Metallic housing or support
C438S926000, C438S666000, C438S637000, C438S622000, C257S712000
Reexamination Certificate
active
07445966
ABSTRACT:
A method, structure and design method for dissipating charge during fabrication of an integrated circuit. The structure includes: a substrate contact in a substrate; one or more wiring levels over the substrate; one or more electrically conductive charge dissipation structures extending from a top surface of an uppermost wiring level of the one or more wiring levels through each lower wiring level of the one or more wiring levels to and in electrical contact with the substrate contact; and circuit structures in the substrate and in the one or more wiring layers, the charge dissipation structures not electrically contacting any the circuit structures in any of the one or more wiring levels, the one or more charge dissipation structures dispersed between the circuit structures.
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Ellis-Monaghan John J.
Gambino Jeffrey P.
Sullivan Timothy D.
Voldman Steven H.
Canale Anthony J.
International Business Machines - Corporation
Rohm Emily
Sarkar Asok K.
Schmeiser Olsen & Watts
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