Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2011-06-14
2011-06-14
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S057000, C438S069000, C438S073000, C438S095000
Reexamination Certificate
active
07960204
ABSTRACT:
A method for forming a thin film photovoltaic device includes providing a transparent substrate comprising a surface region and forming a first electrode layer overlying the surface region. The method further includes forming a thin layer of copper gallium material overlying the first electrode layer to act as an intermediary adhesive layer to facilitate attachment to the first electrode layer. Additionally, the method includes forming a copper layer overlying the thin layer and forming an indium layer overlying the copper layer to form a multilayered structure and subjecting the multilayered structure to thermal treatment process with sulfur bearing species to form a copper indium disulfide alloy material. The copper indium disulfide alloy material comprises a copper:indium atomic ratio of about 1.2:1 to about 3.0:1 overlying a copper gallium disulfide material converted from the thin layer. Furthermore, the method includes forming a window layer overlying the copper indium disulfide alloy material.
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Au Bac H
Kilpatrick Townsend and Stockton LLP
Stion Corporation
Wilczewski Mary
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