Method and structure for a CMOS image sensor using a triple...

Details Method and structure for a CMOS image sensor using a triple... Method and structure for a CMOS image sensor using a triple...

2008-10-27

2011-11-01

Garber, Charles (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S200000, C257SE31057, C257SE31058, C257SE31060, C257SE31063, C257SE31066, C257SE31073, C257SE31075, C257SE31076, C257SE31079, C257SE31080

Reexamination Certificate

active

08048705

ABSTRACT:
A method of forming a CMOS image sensor device, the method includes providing a semiconductor substrate having a P-type impurity characteristic including a surface region. The method forma first thickness of silicon dioxide in a first region of the surface region, a second thickness of silicon dioxide in a second region of the surface region, and a third thickness of silicon dioxide in a third region of the surface region. The method includes forming a first gate layer overlying the second region and a second gate layer overlying the third region, while exposing a portion of the first thickness of silicon dioxide. An N-type impurity characteristic is formed within a region within a vicinity underlying the first thickness of silicon dioxide in the first region of the surface region to cause formation of a photo diode device characterized by the N-type impurity region and the P-type substrate.

REFERENCES:
patent: 5903021 (1999-05-01), Lee et al.
patent: 6258673 (2001-07-01), Houlihan et al.
patent: 6498331 (2002-12-01), Kozlowski et al.
patent: 6545302 (2003-04-01), Han
patent: 6908839 (2005-06-01), Rhodes
patent: 2003/0062561 (2003-04-01), Guidash
patent: 2005/0001277 (2005-01-01), Rhodes
patent: 2007/0241372 (2007-10-01), Kao
patent: 1669149 (2005-09-01), None
patent: 1897253 (2007-01-01), None

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